IGW15N120H3FKSA1
Symbol Micros:
TIGW15n120h3
Case : TO247
Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Odpowiednik: IGW15N120H3;
Parameters
| Gate charge: | 75nC |
| Max. dissipated power: | 217W |
| Max collector current (impulse): | 60A |
| Max. collector current: | 30A |
| Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Gate charge: | 75nC |
| Max. dissipated power: | 217W |
| Max collector current (impulse): | 60A |
| Max. collector current: | 30A |
| Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Operating temperature (range): | -40°C ~ 175°C |
| Collector-emitter voltage: | 1200V |
| Gate-emitter voltage: | 20V |
| Mounting: | SMD |
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