IGW25N120H3

Symbol Micros: TIGW25n120h3
Contractor Symbol:
Case : TO247
Technical drawing Add to favourites
50A; 1200V; 326W; IGBT IGW25N120H3FKSA1
Parameters
Gate charge: 115nC
Max. dissipated power: 326W
Max. collector current: 50A
Max collector current (impulse): 100A
Forvard volatge [Vgeth]: 5,0V ~ 6,5V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IGW25N120H3FKSA1 RoHS Case style: TO247 Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 5,3742 4,5205 4,0069 3,7501 3,6067
Add to comparison tool
Packaging:
30
Gate charge: 115nC
Max. dissipated power: 326W
Max. collector current: 50A
Max collector current (impulse): 100A
Forvard volatge [Vgeth]: 5,0V ~ 6,5V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 1200V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols