IGW25N120H3

Symbol Micros: TIGW25n120h3

104455

TIGW25n120h3

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 20V; 50A; 100A; 326W; 5,0V~6,5V; 115nC; -40°C~175°C; IGW25N120H3FKSA1

Parameters

Gate charge:	115nC
Max. dissipated power:	326W
Max collector current (impulse):	100A
Max. collector current:	50A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IGW25N120H3FKSA1 RoHS Case style: TO247 Datasheet

In stock:

27 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	5,4604	4,5930	4,0712	3,8103	3,6645

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	115nC
Max. dissipated power:	326W
Max collector current (impulse):	100A
Max. collector current:	50A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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