IGW30N60T

Symbol Micros: TIGW30n60t

104456

TIGW30n60t

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C; IGW30N60TFKSA1

Parameters

Gate charge:	167nC
Max. dissipated power:	187W
Max collector current (impulse):	90A
Max. collector current:	45A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IGW30N60TFKSA1 RoHS Case style: TO247 Datasheet

In stock:

25 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	3,2931	2,7210	2,3806	2,2174	2,1252

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IGW30N60TFKSA1 Case style: TO247  

External warehouse:

240 pcs.

Quantity of pcs.	150+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,1252

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Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	167nC
Max. dissipated power:	187W
Max collector current (impulse):	90A
Max. collector current:	45A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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