IGW40N65F5FKSA1

Symbol Micros: TIGW40n65f5
Contractor Symbol:
Case : TO247
Technical drawing Add to favourites
IGBT 650V 74A 255W
Parameters
Gate charge: 95nC
Max. dissipated power: 250W
Max. collector current: 74A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 3,2V ~ 4,8V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IGW40N65F5FKSA1 RoHS Case style: TO247 Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 3,5928 3,0214 2,6767 2,5078 2,4106
Add to comparison tool
Packaging:
30
Gate charge: 95nC
Max. dissipated power: 250W
Max. collector current: 74A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 3,2V ~ 4,8V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 650V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols