IGW50N60H3

Symbol Micros: TIGW50n60h3

119004

TIGW50n60h3

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 600V 100A 333W IGW50N60H3FKSA1

Parameters

Gate charge:	315nC
Max. dissipated power:	333W
Max collector current (impulse):	200A
Max. collector current:	100A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IGW50N60H3FKSA1 RoHS Case style: TO247 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	5,8276	4,9015	4,3454	4,0673	3,9118

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IGW50N60H3FKSA1 Case style: TO247  

External warehouse:

80 pcs.

Quantity of pcs.	60+ (Please wait for the order confirmation)
Net price (EUR)	3,9118

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Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	315nC
Max. dissipated power:	333W
Max collector current (impulse):	200A
Max. collector current:	100A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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