IGW50N60H3

Symbol Micros: TIGW50n60h3
Contractor Symbol:
Case : TO247
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IGBT 600V 100A 333W IGW50N60H3FKSA1
Parameters
Gate charge: 315nC
Max. dissipated power: 333W
Max. collector current: 100A
Max collector current (impulse): 200A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IGW50N60H3FKSA1 RoHS Case style: TO247 Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 5,7101 4,8027 4,2578 3,9853 3,8329
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Packaging:
30
Gate charge: 315nC
Max. dissipated power: 333W
Max. collector current: 100A
Max collector current (impulse): 200A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT

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