IGW50N65F5FKSA1

Symbol Micros: TIGW50n65f5

119006

TIGW50n65f5

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 650V 80A 305W

Parameters

Gate charge:	120nC
Max. dissipated power:	305W
Max collector current (impulse):	150A
Max. collector current:	80A
Forvard volatge [Vgeth]:	3,2V ~ 4,8V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IGW50N65F5FKSA1 RoHS Case style: TO247 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	5+	30+	60+	120+
Net price (EUR)	5,0553	4,5391	4,2952	4,2479	4,2123

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Packaging:
30/60 Quantity (multiple: 1)

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• Parameters

Gate charge:	120nC
Max. dissipated power:	305W
Max collector current (impulse):	150A
Max. collector current:	80A
Forvard volatge [Vgeth]:	3,2V ~ 4,8V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	20V
Mounting:	SMD

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