IGW50N65F5FKSA1

Symbol Micros: TIGW50n65f5
Contractor Symbol:
Case : TO247
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IGBT 650V 80A 305W
Parameters
Gate charge: 120nC
Max. dissipated power: 305W
Max. collector current: 80A
Max collector current (impulse): 150A
Forvard volatge [Vgeth]: 3,2V ~ 4,8V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IGW50N65F5FKSA1 RoHS Case style: TO247 Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 5+ 30+ 60+ 120+
Net price (EUR) 6,7099 5,3984 4,7773 4,6526 4,5649
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Packaging:
30/60
Gate charge: 120nC
Max. dissipated power: 305W
Max. collector current: 80A
Max collector current (impulse): 150A
Forvard volatge [Vgeth]: 3,2V ~ 4,8V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 650V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: SMD

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