IGW60T120

Symbol Micros: TIGW60t120

119009

TIGW60t120

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 1200V 100A 375W IGW60T120FKSA1

Parameters

Gate charge:	280nC
Max. dissipated power:	375W
Max collector current (impulse):	150A
Max. collector current:	100A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IGW60T120FKSA1 RoHS Case style: TO247 Datasheet

In stock:

20 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	6,3403	5,8367	5,5294	5,3734	5,2836

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IGW60T120FKSA1 Case style: TO247  

External warehouse:

180 pcs.

Quantity of pcs.	106+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	5,2836

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Packaging:
1

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	280nC
Max. dissipated power:	375W
Max collector current (impulse):	150A
Max. collector current:	100A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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