IGW60T120FKSA1

Symbol Micros: TIGW60t120

119009

TIGW60t120

Contractor Symbol:

Case : TO247

Datasheet

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Trans IGBT ; 1200V; 20V; 100A; 150A; 375W; 5,0V~6,5V; 280nC; -40°C~150°C; Odpowiednik: IGW60T120FKSA1; IGW60T120; IGW60T120FKS-INF-0;

Parameters

Gate charge:	280nC
Max. dissipated power:	375W
Max collector current (impulse):	150A
Max. collector current:	100A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies

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• Parameters

Gate charge:	280nC
Max. dissipated power:	375W
Max collector current (impulse):	150A
Max. collector current:	100A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	1200V
Operating temperature (range):	-40°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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