IGW75N60T

Symbol Micros: TIGW75n60t
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Case : TO247
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150A; 600V; 428W; IGBT IGW75N60TFKSA1
Parameters
Gate charge: 470nC
Max. dissipated power: 428W
Max. collector current: 150A
Max collector current (impulse): 225A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IGW75N60TFKSA1 RoHS Case style: TO247 Datasheet
In stock:
35 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 5,9942 5,0411 4,4696 4,1828 4,0231
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Packaging:
30
Gate charge: 470nC
Max. dissipated power: 428W
Max. collector current: 150A
Max collector current (impulse): 225A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V

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