IHW15N120R3

Symbol Micros: TIHW15n120r3

104458

TIHW15n120r3

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 20V; 30A; 45A; 254W; 5,1V~6,4V; 165nC; -40°C~175°C; IHW15N120R3FKSA1

Parameters

Gate charge:	165nC
Max. dissipated power:	254W
Max collector current (impulse):	45A
Max. collector current:	30A
Forvard volatge [Vgeth]:	5,1V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies

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• Parameters

Gate charge:	165nC
Max. dissipated power:	254W
Max collector current (impulse):	45A
Max. collector current:	30A
Forvard volatge [Vgeth]:	5,1V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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