IHW15N120R3
Symbol Micros:
TIHW15n120r3
Case : TO247
Transistor IGBT ; 1200V; 20V; 30A; 45A; 254W; 5,1V~6,4V; 165nC; -40°C~175°C; IHW15N120R3FKSA1
Parameters
Gate charge: | 165nC |
Max. dissipated power: | 254W |
Max. collector current: | 30A |
Max collector current (impulse): | 45A |
Forvard volatge [Vgeth]: | 5,1V ~ 6,4V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Gate charge: | 165nC |
Max. dissipated power: | 254W |
Max. collector current: | 30A |
Max collector current (impulse): | 45A |
Forvard volatge [Vgeth]: | 5,1V ~ 6,4V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 1200V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
Mounting: | THT |
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