IHW20N135R3

Symbol Micros: TIHW20n135r3

104459

TIHW20n135r3

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1350V; 20V; 40A; 60A; 310W; 5,1V~6,4V; 195nC; -40°C~175°C;

Parameters

Gate charge:	195nC
Max. dissipated power:	310W
Max. collector current:	40A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	5,1V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies

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• Parameters

Gate charge:	195nC
Max. dissipated power:	310W
Max. collector current:	40A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	5,1V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	1350V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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