IHW20N135R3

Symbol Micros: TIHW20n135r3

104459

TIHW20n135r3

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1350V; 20V; 40A; 60A; 310W; 5,1V~6,4V; 195nC; -40°C~175°C; IHW20N135R3FKSA1

Parameters

Gate charge:	195nC
Max. dissipated power:	310W
Max collector current (impulse):	60A
Max. collector current:	40A
Forvard volatge [Vgeth]:	5,1V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IHW20N135R3 RoHS Case style: TO247 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	3,2884	2,8254	2,5551	2,4211	2,3482

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	195nC
Max. dissipated power:	310W
Max collector current (impulse):	60A
Max. collector current:	40A
Forvard volatge [Vgeth]:	5,1V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	1350V
Gate-emitter voltage:	20V
Mounting:	THT

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