IHW20N135R5XKSA1 Infineon Technologies

Symbol Micros: TIHW20n135r5
Contractor Symbol:
Case : TO247
Transistor IGBT ; 1350V; 20V; 40A; 60A; 288W; 5,1V~6,4V; 170nC; -40°C~175°C; IHW20N135R5XKSA1;
Parameters
Gate charge: 170nC
Max. dissipated power: 288W
Max collector current (impulse): 60A
Max. collector current: 40A
Forvard volatge [Vgeth]: 5,1V ~ 6,4V
Case: TO247
Manufacturer: INFINEON
Manufacturer:: Infineon Manufacturer part number: IHW20N135R5XKSA1 Case style: TO247  
External warehouse:
1350 pcs.
Quantity of pcs. 90+ (Please wait for the order confirmation)
Net price (EUR) 1,3661
Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IHW20N135R5XKSA1 Case style: TO247  
External warehouse:
515 pcs.
Quantity of pcs. 5+ (Please wait for the order confirmation)
Net price (EUR) 2,4265
Add to comparison tool
Packaging:
5
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IHW20N135R5XKSA1 Case style: TO247  
External warehouse:
3330 pcs.
Quantity of pcs. 480+ (Please wait for the order confirmation)
Net price (EUR) 1,3851
Add to comparison tool
Packaging:
240
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Gate charge: 170nC
Max. dissipated power: 288W
Max collector current (impulse): 60A
Max. collector current: 40A
Forvard volatge [Vgeth]: 5,1V ~ 6,4V
Case: TO247
Manufacturer: INFINEON
Collector-emitter voltage: 1350V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT