IHW30N135R5

Symbol Micros: TIHW30n135r5

250444

TIHW30n135r5

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT; 1350V; 20V; 60A; 90A; 330W; 5,1V~6,4V; 235nC; -40°C~175°C; Equivalent: IHW30N135R5XKSA1

Parameters

Gate charge:	235nC
Max. dissipated power:	330W
Max collector current (impulse):	90A
Max. collector current:	60A
Forvard volatge [Vgeth]:	5,1V ~ 6,4V
Case:	TO247
Manufacturer:	INFINEON

All parameters

Manufacturer:: Infineon Manufacturer part number: IHW30N135R5 RoHS Case style: TO247 Datasheet

In stock:

110 pcs.

Quantity of pcs.	1+	5+	30+	120+	240+
Net price (EUR)	2,2780	1,8048	1,6017	1,5371	1,5186

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Packaging:
30/120 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IHW30N135R5XKSA1 Case style: TO247  

External warehouse:

15270 pcs.

Quantity of pcs.	90+ (Please wait for the order confirmation)
Net price (EUR)	1,5186

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Packaging:
30

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	235nC
Max. dissipated power:	330W
Max collector current (impulse):	90A
Max. collector current:	60A
Forvard volatge [Vgeth]:	5,1V ~ 6,4V
Case:	TO247
Manufacturer:	INFINEON
Collector-emitter voltage:	1350V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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