IHW30N160R2
Symbol Micros:
TIHW30n160r2
Case : TO247
60A; 1600V; 390W; IGBT w/ Diode IHW30N160R2FKSA1
Parameters
| Gate charge: | 94nC |
| Max. dissipated power: | 312W |
| Max collector current (impulse): | 90A |
| Max. collector current: | 60A |
| Forvard volatge [Vgeth]: | 5,1V ~ 6,4V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Gate charge: | 94nC |
| Max. dissipated power: | 312W |
| Max collector current (impulse): | 90A |
| Max. collector current: | 60A |
| Forvard volatge [Vgeth]: | 5,1V ~ 6,4V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Operating temperature (range): | -40°C ~ 175°C |
| Collector-emitter voltage: | 1600V |
| Gate-emitter voltage: | 20V |
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