IHW30N160R5XKSA1

Symbol Micros: TIHW30n160r5

250445

TIHW30n160r5

Contractor Symbol:

Case : TO247

Datasheet

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Reverse Conducting IGBT With Monolithic Body Diode IHW30N160R5XKSA1; IHW30N160R5;

Parameters

Gate charge:	205nC
Max. dissipated power:	263W
Max collector current (impulse):	90A
Max. collector current:	60A
Forvard volatge [Vgeth]:	4,5V ~ 5,8V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IHW30N160R5XKSA1 RoHS Case style: TO247 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	3,3836	3,0048	2,7798	2,6662	2,6022

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IHW30N160R5XKSA1 Case style: TO247  

External warehouse:

237 pcs.

Quantity of pcs.	1+ (Please wait for the order confirmation)
Net price (EUR)	2,6022

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	205nC
Max. dissipated power:	263W
Max collector current (impulse):	90A
Max. collector current:	60A
Forvard volatge [Vgeth]:	4,5V ~ 5,8V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	1600V
Gate-emitter voltage:	20V
Mounting:	THT

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