IKD04N60R
Symbol Micros:
TIKD04n60r
Case : TO252 (DPACK)
Transistor IGBT ; 600V; 20V; 8A; 12A; 75W; 4,3V~5,7V; 27nC; -40°C~175°C;
Parameters
| Gate charge: | 27nC |
| Max. dissipated power: | 75W |
| Max collector current (impulse): | 12A |
| Max. collector current: | 8A |
| Forvard volatge [Vgeth]: | 4,3V ~ 5,7V |
| Case: | TO252 (DPAK) |
| Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IKD04N60R RoHS
Case style: TO252 (DPACK) t/r
Datasheet
In stock:
30 pcs.
| Quantity of pcs. | 1+ | 3+ | 10+ | 50+ | 200+ |
|---|---|---|---|---|---|
| Net price (EUR) | 1,1867 | 0,8700 | 0,6974 | 0,5981 | 0,5650 |
Manufacturer:: Infineon
Manufacturer part number: IKD04N60RATMA1
Case style: TO252 (DPACK)
External warehouse:
580 pcs.
| Quantity of pcs. | 5+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,5650 |
| Gate charge: | 27nC |
| Max. dissipated power: | 75W |
| Max collector current (impulse): | 12A |
| Max. collector current: | 8A |
| Forvard volatge [Vgeth]: | 4,3V ~ 5,7V |
| Case: | TO252 (DPAK) |
| Manufacturer: | Infineon Technologies |
| Operating temperature (range): | -40°C ~ 175°C |
| Collector-emitter voltage: | 600V |
| Gate-emitter voltage: | 20V |
| Mounting: | SMD |
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