IKD06N60RF

Symbol Micros: TIKD06n60rf
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Case : TO252 (DPACK)
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12A; 600V; 100W; IGBT w/ Diode
Parameters
Gate charge: 48nC
Max. dissipated power: 100W
Max. collector current: 12A
Max collector current (impulse): 18A
Forvard volatge [Vgeth]: 4,3V ~ 5,7V
Case: TO252 (DPAK)
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKD06N60RF RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
26 pcs.
Quantity of pcs. 1+ 3+ 10+ 20+ 50+
Net price (EUR) 1,1797 0,8842 0,7180 0,6649 0,6210
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Packaging:
50
Gate charge: 48nC
Max. dissipated power: 100W
Max. collector current: 12A
Max collector current (impulse): 18A
Forvard volatge [Vgeth]: 4,3V ~ 5,7V
Case: TO252 (DPAK)
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V

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