IKD06N60RF

Symbol Micros: TIKD06n60rf

123968

TIKD06n60rf

Contractor Symbol:

Case : TO252 (DPAK)

Datasheet

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Transistor IGBT ; 600V; 20V; 12A; 18A; 100W; 4,3V~5,7V; 48nC; -40°C~175°C;

Parameters

Gate charge:	48nC
Max. dissipated power:	100W
Max collector current (impulse):	18A
Max. collector current:	12A
Forvard volatge [Vgeth]:	4,3V ~ 5,7V
Case:	TO252 (DPAK)
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKD06N60RF RoHS Case style: TO252 (DPAK) t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	0,9662	0,6426	0,5316	0,4785	0,4600

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Gate charge:	48nC
Max. dissipated power:	100W
Max collector current (impulse):	18A
Max. collector current:	12A
Forvard volatge [Vgeth]:	4,3V ~ 5,7V
Case:	TO252 (DPAK)
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	600V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	SMD

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