IKP15N60T

Symbol Micros: TIKP15n60t

105795

TIKP15n60t

Contractor Symbol:

Case : TO220

Datasheet

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Transistor IGBT ; 600V; 20V; 26A; 45A; 130W; 4,1V~5,7V; 87nC; -40°C~175°C; IKP15N60TXKSA1

Parameters

Gate charge:	87nC
Max. dissipated power:	130W
Max collector current (impulse):	45A
Max. collector current:	26A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO220
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKP15N60TXKSA1 RoHS Case style: TO220 Datasheet

In stock:

85 pcs.

Quantity of pcs.	1+	5+	50+	100+	300+
Net price (EUR)	1,7535	1,3022	1,0836	1,0578	1,0319

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Gate charge:	87nC
Max. dissipated power:	130W
Max collector current (impulse):	45A
Max. collector current:	26A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO220
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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