IKQB200N75CP2AKSA1

Symbol Micros: TIKQB200N75CP2AKSA1

528082

TIKQB200N75CP2AKSA1

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 750V; 20V; 200A; 600A; 937W; 5V~6,5V; 797nC; -40°C~175°C;

Parameters

Gate charge:	797nC
Max. dissipated power:	937W
Max collector current (impulse):	600A
Max. collector current:	200A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	INFINEON

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• Parameters

Gate charge:	797nC
Max. dissipated power:	937W
Max collector current (impulse):	600A
Max. collector current:	200A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	INFINEON
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	750V
Gate-emitter voltage:	20V
Mounting:	THT

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