IKW15T120

Symbol Micros: TIKW15t120

112052

TIKW15t120

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 1200V 30A 110W IKW15T120FKSA1

Parameters

Gate charge:	85nC
Max. dissipated power:	110W
Max collector current (impulse):	45A
Max. collector current:	30A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies

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• Parameters

Gate charge:	85nC
Max. dissipated power:	110W
Max collector current (impulse):	45A
Max. collector current:	30A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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