IKW20N60T
Symbol Micros:
TIKW20n60t
Case : TO247
Transistor IGBT ; 600V; 20V; 40A; 60A; 166W; 4,1V~5,7V; 120nC; -40°C~175°C;
Parameters
| Gate charge: | 120nC |
| Max. dissipated power: | 166W |
| Max collector current (impulse): | 60A |
| Max. collector current: | 40A |
| Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IKW20N60TFKSA1 RoHS
Case style: TO247
Datasheet
In stock:
10 pcs.
| Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 90+ |
|---|---|---|---|---|---|
| Net price (EUR) | 3,6595 | 3,0779 | 2,7281 | 2,5531 | 2,4562 |
Manufacturer:: Infineon
Manufacturer part number: IKW20N60TFKSA1
Case style: TO247
External warehouse:
247 pcs.
| Quantity of pcs. | 120+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 2,4562 |
Manufacturer:: Infineon
Manufacturer part number: IKW20N60TFKSA1
Case style: TO247
External warehouse:
119 pcs.
| Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 2,4562 |
| Gate charge: | 120nC |
| Max. dissipated power: | 166W |
| Max collector current (impulse): | 60A |
| Max. collector current: | 40A |
| Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Operating temperature (range): | -40°C ~ 175°C |
| Collector-emitter voltage: | 600V |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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