IKW20N60T

Symbol Micros: TIKW20n60t
Contractor Symbol:
Case : TO247
Transistor IGBT ; 600V; 20V; 40A; 60A; 166W; 4,1V~5,7V; 120nC; -40°C~175°C;
Parameters
Gate charge: 120nC
Max. dissipated power: 166W
Max collector current (impulse): 60A
Max. collector current: 40A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKW20N60TFKSA1 RoHS Case style: TO247 Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 3,6387 3,0604 2,7126 2,5386 2,4422
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Packaging:
30
Gate charge: 120nC
Max. dissipated power: 166W
Max collector current (impulse): 60A
Max. collector current: 40A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Operating temperature (range): -40°C ~ 175°C
Collector-emitter voltage: 600V
Gate-emitter voltage: 20V
Mounting: THT