IKW25N120H3
Symbol Micros:
TIKW25n120h3
Case : TO247
50A; 1200V; 326W; IGBT w/ Diode IKW25N120H3FKSA1
Parameters
| Gate charge: | 115nC |
| Max. dissipated power: | 326W |
| Max. collector current: | 50A |
| Max collector current (impulse): | 100A |
| Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
Item in delivery
Estimated date:
2024-05-10
Quantity of pcs.: 30
| Gate charge: | 115nC |
| Max. dissipated power: | 326W |
| Max. collector current: | 50A |
| Max collector current (impulse): | 100A |
| Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Collector-emitter voltage: | 1200V |
| Operating temperature (range): | -40°C ~ 175°C |
| Gate-emitter voltage: | 20V |
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