IKW25N120T2

Symbol Micros: TIKW25n120t2

78830

TIKW25n120t2

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 20V; 50A; 100A; 349W; 5,2V~6,4V; 120nC; -40°C~175°C;

Parameters

Gate charge:	120nC
Max. dissipated power:	349W
Max collector current (impulse):	100A
Max. collector current:	50A
Forvard volatge [Vgeth]:	5,2V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKW25N120T2FKSA1 RoHS Case style: TO247 Datasheet

In stock:

6 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	6,0903	5,1219	4,5413	4,2498	4,0876

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	120nC
Max. dissipated power:	349W
Max collector current (impulse):	100A
Max. collector current:	50A
Forvard volatge [Vgeth]:	5,2V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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