IKW40N120H3
Symbol Micros:
TIKW40n120h3
Case : TO247
Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C;
Parameters
Gate charge: | 185nC |
Max. dissipated power: | 483W |
Max. collector current: | 80A |
Max collector current (impulse): | 160A |
Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Gate charge: | 185nC |
Max. dissipated power: | 483W |
Max. collector current: | 80A |
Max collector current (impulse): | 160A |
Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Operating temperature (range): | -40°C ~ 175°C |
Collector-emitter voltage: | 1200V |
Gate-emitter voltage: | 20V |
Mounting: | THT |
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