IKW40N120H3
Symbol Micros:
TIKW40n120h3
Case : TO247
Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C;
Parameters
| Gate charge: | 185nC |
| Max. dissipated power: | 483W |
| Max collector current (impulse): | 160A |
| Max. collector current: | 80A |
| Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IKW40N120H3FKSA1
Case style: TO247
External warehouse:
210 pcs.
| Quantity of pcs. | 30+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 3,0935 |
Manufacturer:: Infineon
Manufacturer part number: IKW40N120H3FKSA1
Case style: TO247
External warehouse:
144 pcs.
| Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 4,2205 |
| Gate charge: | 185nC |
| Max. dissipated power: | 483W |
| Max collector current (impulse): | 160A |
| Max. collector current: | 80A |
| Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Operating temperature (range): | -40°C ~ 175°C |
| Collector-emitter voltage: | 1200V |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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