IKW40N120H3

Symbol Micros: TIKW40n120h3

104465

TIKW40n120h3

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C;

Parameters

Gate charge:	185nC
Max. dissipated power:	483W
Max collector current (impulse):	160A
Max. collector current:	80A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKW40N120H3 RoHS Case style: TO247 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	4,1026	3,6455	3,3698	3,2331	3,1553

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IKW40N120H3FKSA1 Case style: TO247  

External warehouse:

117 pcs.

Quantity of pcs.	1+ (Please wait for the order confirmation)
Net price (EUR)	4,3888

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	185nC
Max. dissipated power:	483W
Max collector current (impulse):	160A
Max. collector current:	80A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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