IKW40N120T2

Symbol Micros: TIKW40n120t2
Contractor Symbol:
Case : TO247
Trans IGBT Chip N-CH 1.2KV 75A IKW40N120T2FKSA1
Parameters
Gate charge: 192nC
Max. dissipated power: 480W
Max collector current (impulse): 160A
Max. collector current: 75A
Forvard volatge [Vgeth]: 5,2V ~ 6,4V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKW40N120T2 RoHS Case style: TO247 Datasheet
In stock:
25 pcs.
Quantity of pcs. 1+ 5+ 25+ 50+ 100+
Net price (EUR) 8,5223 6,9598 6,2501 6,0791 5,9589
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Packaging:
25
Manufacturer:: Infineon Manufacturer part number: IKW40N120T2FKSA1 Case style: TO247  
External warehouse:
1510 pcs.
Quantity of pcs. 240+ (Please wait for the order confirmation)
Net price (EUR) 5,9589
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Packaging:
240
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Gate charge: 192nC
Max. dissipated power: 480W
Max collector current (impulse): 160A
Max. collector current: 75A
Forvard volatge [Vgeth]: 5,2V ~ 6,4V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 1200V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT