IKW40N120T2

Symbol Micros: TIKW40n120t2

112049

TIKW40n120t2

Contractor Symbol:

Case : TO247

Datasheet

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Trans IGBT Chip N-CH 1.2KV 75A IKW40N120T2FKSA1

Parameters

Gate charge:	192nC
Max. dissipated power:	480W
Max collector current (impulse):	160A
Max. collector current:	75A
Forvard volatge [Vgeth]:	5,2V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKW40N120T2 RoHS Case style: TO247 Datasheet

In stock:

25 pcs.

Quantity of pcs.	1+	5+	25+	50+	100+
Net price (EUR)	8,7161	7,1180	6,3923	6,2173	6,0944

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Packaging:
25 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IKW40N120T2FKSA1 Case style: TO247  

External warehouse:

190 pcs.

Quantity of pcs.	60+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	6,0944

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Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	192nC
Max. dissipated power:	480W
Max collector current (impulse):	160A
Max. collector current:	75A
Forvard volatge [Vgeth]:	5,2V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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