IKW40N60DTPXKSA1 Infineon Technologies

Symbol Micros: TIKW40n60dtp

232058

TIKW40n60dtp

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 600V; 20V; 67A; 120A; 246W; 4,1V~5,7V; 177nC; -40°C~175°C;

Parameters

Gate charge:	177nC
Max. dissipated power:	246W
Max collector current (impulse):	120A
Max. collector current:	67A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	INFINEON

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• Parameters

Gate charge:	177nC
Max. dissipated power:	246W
Max collector current (impulse):	120A
Max. collector current:	67A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	INFINEON
Collector-emitter voltage:	600V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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