IKW50N60H3
Symbol Micros:
TIKW50n60h3
Case : TO247
Transistor IGBT ; 600V; 20V; 100A; 200A; 333W; 4,1V~5,7V; 315nC; -40°C~175°C;
Parameters
| Gate charge: | 315nC |
| Max. dissipated power: | 333W |
| Max. collector current: | 100A |
| Max collector current (impulse): | 200A |
| Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IKW50N60H3 RoHS
Case style: TO247
Datasheet
In stock:
24 pcs.
| Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 90+ |
|---|---|---|---|---|---|
| Net price (EUR) | 2,9559 | 2,5406 | 2,2967 | 2,1770 | 2,1113 |
Manufacturer:: Infineon
Manufacturer part number: IKW50N60H3FKSA1
Case style: TO247
External warehouse:
330 pcs.
| Quantity of pcs. | 60+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 2,2356 |
Manufacturer:: Infineon
Manufacturer part number: IKW50N60H3FKSA1
Case style: TO247
External warehouse:
56 pcs.
| Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 3,6507 |
| Gate charge: | 315nC |
| Max. dissipated power: | 333W |
| Max. collector current: | 100A |
| Max collector current (impulse): | 200A |
| Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Operating temperature (range): | -40°C ~ 175°C |
| Collector-emitter voltage: | 600V |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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