IKW50N60H3

Symbol Micros: TIKW50n60h3

104466

TIKW50n60h3

Contractor Symbol:

Case : TO247

Datasheet

Technical drawing Add to favourites

Transistor IGBT ; 600V; 20V; 100A; 200A; 333W; 4,1V~5,7V; 315nC; -40°C~175°C;

Parameters

Gate charge:	315nC
Max. dissipated power:	333W
Max collector current (impulse):	200A
Max. collector current:	100A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKW50N60H3 RoHS Case style: TO247 Datasheet

In stock:

26 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	2,9834	2,5643	2,3181	2,1973	2,1310

Add to comparison tool Add inquiry (RFQ)

Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IKW50N60H3FKSA1 Case style: TO247  

External warehouse:

53 pcs.

Quantity of pcs.	1+ (Please wait for the order confirmation)
Net price (EUR)	3,1810

Add to comparison tool Add inquiry (RFQ)

Packaging:
1

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	315nC
Max. dissipated power:	333W
Max collector current (impulse):	200A
Max. collector current:	100A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.