IKW50N60H3

Symbol Micros: TIKW50n60h3

104466

TIKW50n60h3

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 600V; 20V; 100A; 200A; 333W; 4,1V~5,7V; 315nC; -40°C~175°C;

Parameters

Gate charge:	315nC
Max. dissipated power:	333W
Max. collector current:	100A
Max collector current (impulse):	200A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKW50N60H3 RoHS Case style: TO247 Datasheet

In stock:

24 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	2,9485	2,5343	2,2909	2,1716	2,1061

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	315nC
Max. dissipated power:	333W
Max. collector current:	100A
Max collector current (impulse):	200A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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