IKW50N60H3
Symbol Micros:
TIKW50n60h3
Case : TO247
100A; 600V; 333W; IGBT w/ Diode
Parameters
| Gate charge: | 315nC |
| Max. dissipated power: | 333W |
| Max. collector current: | 100A |
| Max collector current (impulse): | 200A |
| Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Gate charge: | 315nC |
| Max. dissipated power: | 333W |
| Max. collector current: | 100A |
| Max collector current (impulse): | 200A |
| Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -40°C ~ 175°C |
| Gate-emitter voltage: | 20V |
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