IKW50N60T

Symbol Micros: TIKW50n60t
Contractor Symbol:
Case : TO247
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Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1
Parameters
Gate charge: 310nC
Max. dissipated power: 333W
Max. collector current: 80A
Max collector current (impulse): 150A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKW50N60T RoHS Case style: TO247 Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 5,8656 4,9378 4,3812 4,1029 3,9359
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Packaging:
10
Manufacturer:: Infineon Manufacturer part number: IKW50N60T RoHS Case style: TO247 Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 5+ 30+ 90+ 180+
Net price (EUR) 5,8656 4,6874 4,1470 3,9962 3,9359
Add to comparison tool
Packaging:
30
Gate charge: 310nC
Max. dissipated power: 333W
Max. collector current: 80A
Max collector current (impulse): 150A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V

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