IKW50N60T

Symbol Micros: TIKW50n60t

128448

TIKW50n60t

Contractor Symbol:

Case : TO247

Datasheet

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Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1

Parameters

Gate charge:	310nC
Max. dissipated power:	333W
Max collector current (impulse):	150A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKW50N60T RoHS Case style: TO247 Datasheet

In stock:

8 pcs.

Quantity of pcs.	1+	5+	30+	90+	180+
Net price (EUR)	4,7962	4,1225	3,8105	3,7231	3,6900

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Packaging:
30 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: IKW50N60T RoHS Case style: TO247 Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	4,7962	4,2644	3,9453	3,7845	3,6900

Add to comparison tool Add inquiry (RFQ)

Packaging:
10 Quantity (multiple: 1)

- +

• Parameters

Gate charge:	310nC
Max. dissipated power:	333W
Max collector current (impulse):	150A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V

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