IKW50N60T
Symbol Micros:
TIKW50n60t
Case : TO247
Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1
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Parameters
Gate charge: | 310nC |
Max. dissipated power: | 333W |
Max. collector current: | 80A |
Max collector current (impulse): | 150A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Gate charge: | 310nC |
Max. dissipated power: | 333W |
Max. collector current: | 80A |
Max collector current (impulse): | 150A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
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