IKW50N65H5
Symbol Micros:
TIKW50n65h5
Case : TO247
80A; 650V; 305W; IGBT w/ Diode
Parameters
| Gate charge: | 120nC |
| Max. dissipated power: | 305W |
| Max collector current (impulse): | 150A |
| Max. collector current: | 80A |
| Forvard volatge [Vgeth]: | 3,2V ~ 4,8V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IKW50N65H5FKSA1 RoHS
Case style: TO247
Datasheet
In stock:
97 pcs.
| Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 90+ |
|---|---|---|---|---|---|
| Net price (EUR) | 5,3001 | 4,4588 | 3,9503 | 3,6983 | 3,5573 |
Manufacturer:: Infineon
Manufacturer part number: IKW50N65H5FKSA1
Case style: TO247
External warehouse:
213 pcs.
| Quantity of pcs. | 1+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 4,6000 |
Manufacturer:: Infineon
Manufacturer part number: IKW50N65H5FKSA1
Case style: TO247
External warehouse:
560 pcs.
| Quantity of pcs. | 240+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 3,5573 |
| Gate charge: | 120nC |
| Max. dissipated power: | 305W |
| Max collector current (impulse): | 150A |
| Max. collector current: | 80A |
| Forvard volatge [Vgeth]: | 3,2V ~ 4,8V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -40°C ~ 175°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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