IKW50N65H5

Symbol Micros: TIKW50n65h5

98194

TIKW50n65h5

Contractor Symbol:

Case : TO247

Datasheet

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80A; 650V; 305W; IGBT w/ Diode

Parameters

Gate charge:	120nC
Max. dissipated power:	305W
Max collector current (impulse):	150A
Max. collector current:	80A
Forvard volatge [Vgeth]:	3,2V ~ 4,8V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKW50N65H5FKSA1 RoHS Case style: TO247 Datasheet

In stock:

101 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	5,4294	4,5675	4,0466	3,7885	3,6441

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IKW50N65H5FKSA1 Case style: TO247  

External warehouse:

305 pcs.

Quantity of pcs.	1+ (Please wait for the order confirmation)
Net price (EUR)	3,6441

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Gate charge:	120nC
Max. dissipated power:	305W
Max collector current (impulse):	150A
Max. collector current:	80A
Forvard volatge [Vgeth]:	3,2V ~ 4,8V
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	600V
Gate-emitter voltage:	20V
Mounting:	THT

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