IMBF170R1K0M1

Symbol Micros: TIMBF170R1K0M1

358802

TIMBF170R1K0M1

Contractor Symbol:

Case : TO263

Datasheet

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Transistor N-MOSFET; 1700V; 20V; 2,037Ohm; 5,2A; 68W; -55°C ~ 175°C; Substitute: IMBF170R1K0M1XTMA1;

Parameters

Open channel resistance:	2,037Ohm
Max. drain current:	5,2A
Max. power loss:	68W
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	1700V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V

All parameters

         

 

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• Parameters

Open channel resistance:	2,037Ohm
Max. drain current:	5,2A
Max. power loss:	68W
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	1700V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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