IMBG120R045M1H

Symbol Micros: TIMBG120R045M1H

358806

TIMBG120R045M1H

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Datasheet

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Tranzystor N-MOSFET; 1200V; 23V; 85mOhm; 47A; 227W; -55°C ~ 175°C; Odpowiednik: IMBG120R045M1HXTMA1;

Parameters

Open channel resistance:	85mOhm
Max. drain current:	47A
Max. power loss:	227W
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	1200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	23V

All parameters

Manufacturer:: Infineon Manufacturer part number: IMBG120R045M1H Case style:    

External warehouse:

3000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	6,5130

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Packaging:
1000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	85mOhm
Max. drain current:	47A
Max. power loss:	227W
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	1200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	23V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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