IMBG120R045M1H

Symbol Micros: TIMBG120R045M1H

358806

TIMBG120R045M1H

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Tranzystor N-MOSFET; 1200V; 23V; 85mOhm; 47A; 227W; -55°C ~ 175°C; Odpowiednik: IMBG120R045M1HXTMA1;

Parameters

Open channel resistance:	85mOhm
Max. drain current:	47A
Max. power loss:	227W
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	1200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	23V

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• Parameters

Open channel resistance:	85mOhm
Max. drain current:	47A
Max. power loss:	227W
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	1200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	23V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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