IPA60R190C6

Symbol Micros: TIPA60r190c6
Contractor Symbol:
Case : TO220iso
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N-MOSFET 20,2A 650V 151W 0.19Ω IPA60R190C6XKSA1
Parameters
Open channel resistance: 440mOhm
Max. drain current: 20,2A
Max. power loss: 151W
Case: TO220iso
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPA60R190C6 RoHS Case style: TO220iso Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 3,5292 2,9341 2,5834 2,3620 2,2767
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Packaging:
50
Open channel resistance: 440mOhm
Max. drain current: 20,2A
Max. power loss: 151W
Case: TO220iso
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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