IPA60R199CPXKSA1

Symbol Micros: TIPA60r199cp

116365

TIPA60r199cp

Contractor Symbol:

Case : TO220iso

Datasheet

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N-MOSFET 650V 16A 34W

Parameters

Open channel resistance:	490mOhm
Max. drain current:	16A
Max. power loss:	34W
Case:	TO220iso
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPA60R199CPXKSA1 Case style: TO220iso  

External warehouse:

500 pcs.

Quantity of pcs.	100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,4993

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Packaging:
50

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	490mOhm
Max. drain current:	16A
Max. power loss:	34W
Case:	TO220iso
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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