IPA65R650CE

Symbol Micros: TIPA65r650ce

122175

TIPA65r650ce

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N-MOSFET 10.1A 650V 28W 0.65Ω IPA65R650CEXKSA1

Parameters

Open channel resistance:	650mOhm
Max. drain current:	10,1A
Max. power loss:	28W
Case:	TO220iso
Manufacturer:	Infineon
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	650mOhm
Max. drain current:	10,1A
Max. power loss:	28W
Case:	TO220iso
Manufacturer:	Infineon
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-40°C ~ 150°C
Mounting:	THT

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