IPA65R650CE

Symbol Micros: TIPA65r650ce

122175

TIPA65r650ce

Contractor Symbol:

Case : TO220iso

Datasheet

Technical drawing Add to favourites

N-MOSFET 10.1A 650V 28W 0.65Ω IPA65R650CEXKSA1

Parameters

Open channel resistance:	650mOhm
Max. drain current:	10,1A
Max. power loss:	28W
Case:	TO220iso
Manufacturer:	INFINEON
Max. drain-source voltage:	650V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: IPA65R650CEXKSA1 Case style: TO220iso  

External warehouse:

580 pcs.

Quantity of pcs.	350+ (Please wait for the order confirmation)
Net price (EUR)	0,3698

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Packaging:
50

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	650mOhm
Max. drain current:	10,1A
Max. power loss:	28W
Case:	TO220iso
Manufacturer:	INFINEON
Max. drain-source voltage:	650V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-40°C ~ 150°C
Mounting:	THT

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