IPAW60R600P7SXKSA1

Symbol Micros: TIPAW60r600p7s
Contractor Symbol:
Case : TO220iso
600V CoolMOS P7 Power Transistor
Parameters
Open channel resistance: 600mOhm
Max. drain current: 6A
Max. power loss: 21W
Case: TO220FP
Manufacturer: INFINEON
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPAW60R600P7SXKSA1 Case style: TO220iso  
External warehouse:
135 pcs.
Quantity of pcs. 45+ (Please wait for the order confirmation)
Net price (EUR) 0,2839
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Packaging:
45
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 600mOhm
Max. drain current: 6A
Max. power loss: 21W
Case: TO220FP
Manufacturer: INFINEON
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -40°C ~ 150°C
Mounting: THT