IPB019N08N3 G

Symbol Micros: TIPB019n08n3

83808

TIPB019n08n3

Contractor Symbol:

Case : TO263/7

Datasheet

Technical drawing Add to favourites

N-MOSFET 180A 80V 300W 0.0019Ω

Parameters

Open channel resistance:	1,9mOhm
Max. drain current:	100A
Max. power loss:	300W
Case:	TO263/7
Manufacturer:	INFINEON
Max. drain-source voltage:	80V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: IPB019N08N3GATMA1 Case style: TO263/7  

External warehouse:

6000 pcs.

Quantity of pcs.	1000+ (Please wait for the order confirmation)
Net price (EUR)	1,6551

Add to comparison tool Add inquiry (RFQ)

Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

Manufacturer:: Infineon Manufacturer part number: IPB019N08N3GATMA1 Case style: TO263/7  

External warehouse:

29000 pcs.

Quantity of pcs.	1000+ (Please wait for the order confirmation)
Net price (EUR)	1,7705

Add to comparison tool Add inquiry (RFQ)

Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	1,9mOhm
Max. drain current:	100A
Max. power loss:	300W
Case:	TO263/7
Manufacturer:	INFINEON
Max. drain-source voltage:	80V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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