IPB019N08N3 G
Symbol Micros:
TIPB019n08n3
Case : TO263/7
N-MOSFET 180A 80V 300W 0.0019Ω
Parameters
| Open channel resistance: | 1,9mOhm |
| Max. drain current: | 100A |
| Max. power loss: | 300W |
| Case: | TO263/7 |
| Manufacturer: | INFINEON |
| Max. drain-source voltage: | 80V |
| Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IPB019N08N3GATMA1
Case style: TO263/7
External warehouse:
4000 pcs.
| Quantity of pcs. | 1000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 1,8748 |
| Open channel resistance: | 1,9mOhm |
| Max. drain current: | 100A |
| Max. power loss: | 300W |
| Case: | TO263/7 |
| Manufacturer: | INFINEON |
| Max. drain-source voltage: | 80V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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