IPB072N15N3G Infineon

Symbol Micros: TIPB072n15n3g
Contractor Symbol:
Case : TO263/3
N-MOSFET 150V 100A 300W 7.2mΩ
Parameters
Open channel resistance: 7,7mOhm
Max. drain current: 100A
Max. power loss: 300W
Case: TO263/3
Manufacturer: Infineon Technologies
Max. drain-source voltage: 150V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPB072N15N3G RoHS Case style: TO263/3 Datasheet
In stock:
70 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 200+
Net price (EUR) 2,5636 2,1128 1,9415 1,8522 1,8311
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Packaging:
100
Manufacturer:: Infineon Manufacturer part number: IPB072N15N3G RoHS Case style: TO263/3 Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 200+
Net price (EUR) 2,5636 2,1128 1,9415 1,8522 1,8311
Add to comparison tool
Packaging:
20
Manufacturer:: Infineon Manufacturer part number: IPB072N15N3G RoHS Case style: TO263/3 Datasheet
In stock:
4 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 200+
Net price (EUR) 2,5636 2,1128 1,9415 1,8522 1,8311
Add to comparison tool
Packaging:
10
Open channel resistance: 7,7mOhm
Max. drain current: 100A
Max. power loss: 300W
Case: TO263/3
Manufacturer: Infineon Technologies
Max. drain-source voltage: 150V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD