IPB072N15N3G Infineon

Symbol Micros: TIPB072n15n3g

118197

TIPB072n15n3g

Contractor Symbol:

Case : TO263/3

Datasheet

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N-MOSFET 150V 100A 300W 7.2mΩ

Parameters

Open channel resistance:	7,7mOhm
Max. drain current:	100A
Max. power loss:	300W
Case:	TO263/3
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	150V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: IPB072N15N3G RoHS Case style: TO263/3/t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,7633	1,4717	1,3031	1,2211	1,1755

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Packaging:
1000 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: IPB072N15N3G RoHS Case style: TO263/3 Datasheet

In stock:

14 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,7633	1,4717	1,3031	1,2211	1,1755

Add to comparison tool Add inquiry (RFQ)

Packaging:
100 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	7,7mOhm
Max. drain current:	100A
Max. power loss:	300W
Case:	TO263/3
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	150V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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