IPB090N06N3G INFINEON

Symbol Micros: TIPB090n06n3
Contractor Symbol:
Case : TO263/3
N-MOSFET 60V 50A 71W 9mΩ
Parameters
Open channel resistance: 9,3mOhm
Max. drain current: 50A
Max. power loss: 71W
Case: TO263/3
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPB090N06N3G RoHS Case style: TO263/3 Datasheet
In stock:
130 pcs.
Quantity of pcs. 1+ 5+ 30+ 200+ 400+
Net price (EUR) 0,8760 0,5817 0,4635 0,4241 0,4171
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Packaging:
200
Open channel resistance: 9,3mOhm
Max. drain current: 50A
Max. power loss: 71W
Case: TO263/3
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD