IPB107N20N3G INFINEON

Symbol Micros: TIPB107n20n3g

118222

TIPB107n20n3g

Contractor Symbol:

Case : TO263/3

Datasheet

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Tranzystor N-Channel MOSFET; 200V; 20V; 11mOhm; 88A; 300W; -55°C ~ 175°C; Odpowiednik: IPB107N20N3GATMA1;

Parameters

Open channel resistance:	11mOhm
Max. drain current:	88A
Max. power loss:	300W
Case:	TO263/3
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPB107N20N3G RoHS Case style: TO263/3 Datasheet

In stock:

15 pcs.

Quantity of pcs.	1+	5+	20+	100+	200+
Net price (EUR)	4,3506	3,7411	3,5044	3,3754	3,3473

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Packaging:
20 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IPB107N20N3GATMA1 Case style: TO263/3  

External warehouse:

30000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	3,3473

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Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	11mOhm
Max. drain current:	88A
Max. power loss:	300W
Case:	TO263/3
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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