IPB107N20N3G INFINEON
Symbol Micros:
TIPB107n20n3g
Case : TO263/3
Tranzystor N-Channel MOSFET; 200V; 20V; 11mOhm; 88A; 300W; -55°C ~ 175°C; Odpowiednik: IPB107N20N3GATMA1;
Parameters
Open channel resistance: | 11mOhm |
Max. drain current: | 88A |
Max. power loss: | 300W |
Case: | TO263/3 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 200V |
Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IPB107N20N3G RoHS
Case style: TO263/3
Datasheet
In stock:
15 pcs.
Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 200+ |
---|---|---|---|---|---|
Net price (EUR) | 4,3533 | 3,7435 | 3,5066 | 3,3776 | 3,3494 |
Manufacturer:: Infineon
Manufacturer part number: IPB107N20N3GATMA1
Case style: TO263/3
External warehouse:
31000 pcs.
Quantity of pcs. | 1000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 3,3494 |
Open channel resistance: | 11mOhm |
Max. drain current: | 88A |
Max. power loss: | 300W |
Case: | TO263/3 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 200V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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