G120P06M

Symbol Micros: TIPB110p06lm GO

397036

TIPB110p06lm GO

Contractor Symbol:

Case : TO263

Datasheet

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Transistor MOSFET; TO-263; P-Channel; NO ESD; -60V; -120A; 277W; -2.5V; 8,5mOhm IPB110P06LM; IRF9Z34S, SiHF9Z34S

Parameters

Open channel resistance:	8,5mOhm
Max. drain current:	120A
Max. power loss:	277W
Case:	TO263
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	8,5mOhm
Max. drain current:	120A
Max. power loss:	277W
Case:	TO263
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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