IPB60R190C6 INFINEON

Symbol Micros: TIPB60r190c6

197955

TIPB60r190c6

Contractor Symbol:

Case : D2PAK

Datasheet

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Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK IPB60R190C6ATMA1

Parameters

Open channel resistance:	190mOhm
Max. drain current:	20,2A
Max. power loss:	151W
Case:	D2PAK
Manufacturer:	INFINEON
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPB60R190C6ATMA1 Case style: D2PAK  

External warehouse:

1000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,2768

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Packaging:
1000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	190mOhm
Max. drain current:	20,2A
Max. power loss:	151W
Case:	D2PAK
Manufacturer:	INFINEON
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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