IPB60R385CP Infineon

Symbol Micros: TIPB60r385cp

118216

TIPB60r385cp

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 600V 9A 83W 385mΩ

Parameters

Open channel resistance:	940mOhm
Max. drain current:	9A
Max. power loss:	83W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	940mOhm
Max. drain current:	9A
Max. power loss:	83W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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