IPB60R385CP Infineon

Symbol Micros: TIPB60r385cp
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Case : TO263 (D2PAK)
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N-MOSFET 600V 9A 83W 385mΩ
Parameters
Open channel resistance: 940mOhm
Max. drain current: 9A
Max. power loss: 83W
Case: TO263 (D2PAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
         
 
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Open channel resistance: 940mOhm
Max. drain current: 9A
Max. power loss: 83W
Case: TO263 (D2PAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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