IPD031N06L3G Infineon

Symbol Micros: TIPD031n06l3g

118146

TIPD031n06l3g

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Case : TO252/3 (DPAK)

Datasheet

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N-MOSFET 80V 100A 167W 3.1mΩ IPD031N06L3GATMA1

Parameters

Open channel resistance:	5,2mOhm
Max. drain current:	100A
Max. power loss:	167W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	5,2mOhm
Max. drain current:	100A
Max. power loss:	167W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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