IPD060N03LG Infineon

Symbol Micros: TIPD060n03l

118143

TIPD060n03l

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

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N-MOSFET 30V 50A 56W 6mΩ

Parameters

Open channel resistance:	9mOhm
Max. drain current:	50A
Max. power loss:	56W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD060N03LGATMA1 Case style: TO252/3 (DPAK)  

External warehouse:

8636 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2140

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	9mOhm
Max. drain current:	50A
Max. power loss:	56W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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