IPD068P03L3GATMA1 Infineon

Symbol Micros: TIPD068p03l3g

118093

TIPD068p03l3g

Contractor Symbol:

Case : TO252

Datasheet

Technical drawing Add to favourites

P-MOSFET 30V 70A 100W 6.8mΩ

Parameters

Open channel resistance:	11mOhm
Max. drain current:	70A
Max. power loss:	100W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD068P03L3GATMA1 Case style: TO252  

External warehouse:

2500 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,3248

Add inquiry (RFQ)

Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

Manufacturer:: Infineon Manufacturer part number: IPD068P03L3GATMA1 Case style: TO252  

External warehouse:

7500 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,3312

Add to comparison tool Add inquiry (RFQ)

Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	11mOhm
Max. drain current:	70A
Max. power loss:	100W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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