IPD068P03L3GATMA1 Infineon

Symbol Micros: TIPD068p03l3g

118093

TIPD068p03l3g

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Case : TO252

Datasheet

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P-MOSFET 30V 70A 100W 6.8mΩ

Parameters

Open channel resistance:	11mOhm
Max. drain current:	70A
Max. power loss:	100W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	11mOhm
Max. drain current:	70A
Max. power loss:	100W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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