IPD068P03L3GATMA1 Infineon

Symbol Micros: TIPD068p03l3g
Contractor Symbol:
Case : TO252
P-MOSFET 30V 70A 100W 6.8mΩ
Parameters
Open channel resistance: 11mOhm
Max. drain current: 70A
Max. power loss: 100W
Case: TO252
Manufacturer: Infineon Technologies
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
         
 
Item available on request
Open channel resistance: 11mOhm
Max. drain current: 70A
Max. power loss: 100W
Case: TO252
Manufacturer: Infineon Technologies
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD