IPD090N03LG Infineon

Symbol Micros: TIPD090n03lg

118151

TIPD090n03lg

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

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N-MOSFET 30V 40A 42W 9mΩ

Parameters

Open channel resistance:	13,5mOhm
Max. drain current:	40A
Max. power loss:	42W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD090N03LG RoHS Case style: TO252/3 (DPAK) Datasheet

In stock:

75 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,4424	0,2682	0,2056	0,1854	0,1765

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Packaging:
200 Quantity (multiple: 1)

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Manufacturer:: Infineon Manufacturer part number: IPD090N03LGATMA1 Case style: TO252/3 (DPAK)  

External warehouse:

45064 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1765

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	13,5mOhm
Max. drain current:	40A
Max. power loss:	42W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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