IPD090N03LG Infineon

Symbol Micros: TIPD090n03lg
Contractor Symbol:
Case : TO252/3 (DPAK)
Transistor N-Channel MOSFET; 30V; 20V; 13,5mOhm; 40A; 42W; -55°C ~ 175°C; Replacement: IPD090N03LGATMA1; zamiennik dla IRLR8729TRPBF; IPD090N03LG; IPD090N03LG-VB; HSU3004; HSU80N03;
Parameters
Open channel resistance: 13,5mOhm
Max. drain current: 40A
Max. power loss: 42W
Case: TO252/3 (DPAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPD090N03LG RoHS Case style: TO252/3 (DPAK) Datasheet
In stock:
75 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,4410 0,2674 0,2050 0,1849 0,1759
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Packaging:
200
Manufacturer:: Infineon Manufacturer part number: IPD090N03LGATMA1 Case style: TO252/3 (DPAK)  
External warehouse:
62564 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1759
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Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 13,5mOhm
Max. drain current: 40A
Max. power loss: 42W
Case: TO252/3 (DPAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD