IPD090N03LG Infineon

Symbol Micros: TIPD090n03lg

118151

TIPD090n03lg

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

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Transistor N-Channel MOSFET; 30V; 20V; 13,5mOhm; 40A; 42W; -55°C ~ 175°C; Replacement: IPD090N03LGATMA1; zamiennik dla IRLR8729TRPBF; IPD090N03LG; IPD090N03LG-VB; HSU3004; HSU80N03;

Parameters

Open channel resistance:	13,5mOhm
Max. drain current:	40A
Max. power loss:	42W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD090N03LG RoHS Case style: TO252/3 (DPAK) Datasheet

In stock:

75 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,4179	0,2723	0,1956	0,1711	0,1603

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	13,5mOhm
Max. drain current:	40A
Max. power loss:	42W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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