IPD090N03LG Infineon
Symbol Micros:
TIPD090n03lg
Case : TO252/3 (DPAK)
Transistor N-Channel MOSFET; 30V; 20V; 13,5mOhm; 40A; 42W; -55°C ~ 175°C; Replacement: IPD090N03LGATMA1; zamiennik dla IRLR8729TRPBF; IPD090N03LG; IPD090N03LG-VB; HSU3004; HSU80N03;
Parameters
Open channel resistance: | 13,5mOhm |
Max. drain current: | 40A |
Max. power loss: | 42W |
Case: | TO252/3 (DPAK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 30V |
Transistor type: | N-MOSFET |
Open channel resistance: | 13,5mOhm |
Max. drain current: | 40A |
Max. power loss: | 42W |
Case: | TO252/3 (DPAK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 30V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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