IPD090N03LG Infineon
Symbol Micros:
TIPD090n03lg
Case : TO252/3 (DPAK)
Transistor N-Channel MOSFET; 30V; 20V; 13,5mOhm; 40A; 42W; -55°C ~ 175°C; Replacement: IPD090N03LGATMA1; zamiennik dla IRLR8729TRPBF; IPD090N03LG; IPD090N03LG-VB; HSU3004; HSU80N03;
Parameters
| Open channel resistance: | 13,5mOhm |
| Max. drain current: | 40A |
| Max. power loss: | 42W |
| Case: | TO252/3 (DPAK) |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 30V |
| Max. gate-source Voltage: | 20V |
Manufacturer:: Infineon
Manufacturer part number: IPD090N03LG RoHS
Case style: TO252/3 (DPAK)
Datasheet
In stock:
75 pcs.
| Quantity of pcs. | 3+ | 10+ | 50+ | 200+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,4079 | 0,2659 | 0,1909 | 0,1671 | 0,1565 |
Manufacturer:: Infineon
Manufacturer part number: IPD090N03LGATMA1
Case style: TO252/3 (DPAK)
External warehouse:
15064 pcs.
| Quantity of pcs. | 2500+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,1792 |
| Open channel resistance: | 13,5mOhm |
| Max. drain current: | 40A |
| Max. power loss: | 42W |
| Case: | TO252/3 (DPAK) |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 30V |
| Max. gate-source Voltage: | 20V |
| Transistor type: | N-MOSFET |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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