IPD100N06S403ATMA2

Symbol Micros: TIPD100n06s403

198068

TIPD100n06s403

Contractor Symbol:

Case : DPAK

Datasheet

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Transistor N-Channel MOSFET; 60V; 20V; 3,5mOhm; 100A; 150W; -55°C ~ 175°C; Substitute: IPD100N06S4-03; IPD100N06S403ATMA2; IPD100N06S403ATMA1;

Parameters

Open channel resistance:	3,5mOhm
Max. drain current:	100A
Max. power loss:	150W
Case:	TO-252-3
Manufacturer:	INFINEON
Max. drain-source voltage:	60V
Max. drain-gate voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD100N06S403ATMA2 RoHS Case style: DPAK t/r Datasheet

In stock:

8 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	4,2171	3,5496	3,1487	2,9505	2,8303

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Packaging:
10 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	3,5mOhm
Max. drain current:	100A
Max. power loss:	150W
Case:	TO-252-3
Manufacturer:	INFINEON
Max. drain-source voltage:	60V
Max. drain-gate voltage:	20V
Transistor type:	MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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