IPD110N12N3GATMA1 

Symbol Micros: TIPD110n12n3g

171902

TIPD110n12n3g

Contractor Symbol:

Case : DPAK

Datasheet

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Transistor N-Channel MOSFET; 120V; 20V; 11mOhm; 75A; 136W; -55°C~175°C;

Parameters

Open channel resistance:	11mOhm
Max. drain current:	75A
Max. power loss:	136W
Case:	DPAK
Manufacturer:	INFINEON
Max. drain-source voltage:	120V
Max. drain-gate voltage:	60V

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD110N12N3GATMA1 Case style: DPAK  

External warehouse:

30000 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,6369

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	11mOhm
Max. drain current:	75A
Max. power loss:	136W
Case:	DPAK
Manufacturer:	INFINEON
Max. drain-source voltage:	120V
Max. drain-gate voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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