IPD180N10N3G Infineon

Symbol Micros: TIPD180n10n3g

118144

TIPD180n10n3g

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

Add to favourites

N-MOSFET 100V 43A 71W 18mΩ IPD180N10N3GBTMA1 IPD180N10N3GATMA1

Parameters

Open channel resistance:	18mOhm
Max. drain current:	43A
Max. power loss:	71W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Open channel resistance:	18mOhm
Max. drain current:	43A
Max. power loss:	71W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.