IPD180N10N3G Infineon

Symbol Micros: TIPD180n10n3g

118144

TIPD180n10n3g

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

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N-MOSFET 100V 43A 71W 18mΩ IPD180N10N3GBTMA1 IPD180N10N3GATMA1

Parameters

Open channel resistance:	18mOhm
Max. drain current:	43A
Max. power loss:	71W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD180N10N3GATMA1 Case style: TO252/3 (DPAK)  

External warehouse:

7500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3637

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	18mOhm
Max. drain current:	43A
Max. power loss:	71W
Case:	TO252/3 (DPAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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