IPD30N06S2L23ATMA3 

Symbol Micros: TIPD30n06s2l23

171908

TIPD30n06s2l23

Contractor Symbol:

Case : DPAK

Datasheet

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Transistor N-Channel MOSFET; 55V; 20V; 23mOhm; 30A; 100W; -55°C~175°C;

Parameters

Open channel resistance:	23mOhm
Max. drain current:	30A
Max. power loss:	100W
Case:	DPAK
Manufacturer:	INFINEON
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD30N06S2L23ATMA3 Case style: DPAK  

External warehouse:

270000 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3699

Add inquiry (RFQ)

Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: IPD30N06S2L23ATMA3 Case style: DPAK  

External warehouse:

1227500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3772

Add to comparison tool Add inquiry (RFQ)

Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	23mOhm
Max. drain current:	30A
Max. power loss:	100W
Case:	DPAK
Manufacturer:	INFINEON
Max. drain-source voltage:	55V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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