IPD320N20N3G

Symbol Micros: TIPD320n20n3g

198088

TIPD320n20n3g

Contractor Symbol:

Case : DPAK

Datasheet

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Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) DPAK IPD320N20N3GATMA1 IPD320N20N3GBTMA1

Parameters

Open channel resistance:	32mOhm
Max. drain current:	34A
Max. power loss:	136W
Case:	DPAK
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	32mOhm
Max. drain current:	34A
Max. power loss:	136W
Case:	DPAK
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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